p age:p2-p1 plastic-encapsulate transistors features complimentary to pxt8550 collector current: i c =1.5a marking : y1 maximum ratings (ta=25 unless otherwise noted) parameter symbol value unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 25 v emitter-base voltage v ebo 5 v collector current -continuous i c 1500 collector power dissipation p c 1000 junction temperature t j 150 storage temperature t stg -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v cbo i c = 100 a, i e =0 40 v collector-emitter breakdown voltage v ceo i c = 0.1ma, i b =0 25 v emitter - base breakd o w n v o l t age v ebo i e = 100 a, c =0 5 v collector cut-off current i cbo v cb = 40 v , i e =0 0.1 a collector cut-off current i ceo v ce = 20 v , i b =0 0.1 a emitter cut-off current i ebo v eb = 5v, i c =0 0.1 a dc current gain h fe(1) v ce = 1v, i c = 100ma 85 400 h fe(2) v ce = 1v, i c = 800ma 50 collector-emitter saturation voltage v ce (sat) i c = 800 ma, i b =80ma 0.5 v base-emitter saturation voltage v be (sat) i c =800ma, i b =80ma 1.2 v base - emitter v ol t age v be v ce = 1 v , i c =10ma 1 v base - emitter posit i v e f a v or v o l t age v be f i b = 1 a 1.5 5 v transition frequency f t v ce =10v,i c =50ma,f=30mhz 100 mhz output capacitance c ob v cb =10v,i e =0,f=1mhz 15 pf classification of hfe rank b c d d1 r ange 85-160 120-200 160-300 300-400 1. base 2. collecto sot-89 3. emitter (npn) ma m w PXT8050 mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/
page:p2-p2 plastic-encapsulate transistors typical characteristics PXT8050 mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/
|
